Modeling of Laser Processing For Advanced Silicon Solar Cells

G. Poulain[1], D. Blanc[1], A. Kaminski[1], B. Semmache[2], and M. Lemiti[1]
[1]Université de Lyon: Institut des Nanotechnologies de Lyon INL, CNRS, INSA de Lyon, Villeurbanne, France
[2]SEMCO Eng., Montpellier Cedex 5 - France
Published in 2010

Silicon solar cells still require cost reduction and improved efficiency to become more competitive. New architectures can provide a significant increase in efficiency, but today most of the approaches need additional processing steps. In this context, laser processing offers a unique way to replace technological steps like photolithography that is not compatible with the requirements of the photovoltaic industry. This paper proposes to discuss the different aspects of the simulation of these new laser processes with the help of COMSOL. Selective ablation of dielectrics with a nanosecond UV laser is studied to open locally antireflection and passivation coatings at the front surface of silicon solar cells in order to take electric contacts. At the same time the influence of induced localized thermal effects on phosphorous-doped silicon emitters is investigated. Modeling results are compared to experimental data, especially SIMS measurements of the phosphorous doping profile.

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