Application Gallery

The Application Gallery features COMSOL Multiphysics tutorial and demo app files pertinent to the electrical, mechanical, fluid, and chemical disciplines. You can download ready-to-use tutorial models and demo apps with step-by-step instructions for how to create them yourself. The examples in the gallery serve as a great starting point for your own simulation work.
Use the Quick Search to find tutorials and apps relevant to your area of expertise. Log in or create a COMSOL Access account that is associated with a valid COMSOL license to download the MPH-files.

Primary Creep Under Nonconstant Load

In this model example, you will study the creep behavior of material under non-constant loading. You will model the primary creep using a Norton-Bailey law and study the difference between the time hardening and the strain hardening methods available in COMSOL Multiphysics. The model is taken from NAFEMS Understanding Non-Linear Finite Analysis Through Illustrative Benchmarks. The load consist ...

Parameterized Roller Shutter Geometry

During the design of a building, environmental issues have gained considerable influence in the entire project. One of the first concerns is to improve thermal performances. In this process, simulation software are key tools to model thermal losses and performances in the building. The international standard ISO 10077-2:2012 deals with thermal performance of windows, doors and shutters. It ...

Vdara¬ģ Caustic Surface

When the Vdara hotel first opened in Las Vegas, visitors relaxing by the pool would experience intense periods of heat at certain times of the day, at certain times of the year. This intense heat was caused by the reflection of solar radiation from the curved, reflective surface on the South-facing side of the hotel. This model shows how a caustic surface is generated in the pool area around the ...

Thermal Analysis of a Bipolar Transistor

This model demonstrates how to couple the Semiconductor interface to the Heat Transfer in Solids interface. A thermal analysis is performed on the existing bipolar transistor model in the case when the device is operated in the active-forward configuration. The Semiconductor interface calculates the carrier dynamics and currents within the device and outputs a heating term due to electrical ...

Flow Through a Uniform Inclined Screen

This model simulates the flow through a uniform inclined screen using the Screen feature in Single-Phase Flow physics and compares the results with an analytic solution.

Pacemaker Electrode

This model, dealing with the current and potential distribution around one pair of electrodes, demonstrates how to synchronize and modify geometry in SolidWorks by using the LiveLink interface.

Numerical modeling of glacier flow

Glacier ice is generally treated as an incompressible, heat-conducting non-Newtonian fluid. The viscosity of ice depends on temperature and on the state of deformation. In the case of Storglaciären, however, the influence of temperature-dependent viscosity on the general flow field of the glacier is small. With COMSOL Multiphysics, it is relatively easy to verify that neglecting this ...

Electrodeposition on a Resistive Patterned Wafer

This example models time-dependent copper deposition on a resistive wafer in a cupplater reactor. As the deposited layer builds up, the resistive losses of the deposited layer decreases. The benefit of using a current thief for a more uniform deposit is demonstrated.

Water Purification by Silver Complexation

Many industrial processes leave remainders of toxic dissolved metal ions in process flows. A common method for removing metal ions from water is complexation. This model example shows a purification reactor where silver ions are complexated to diamine-silver for removal. Ammonia (L) is added across a membrane in a tubular reactor in order to remove silver ions (M) from a water stream. A ...

DC Characteristics of a MESFET

In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron concentration is expected to be orders of magnitude larger than the hole concentration. Accordingly, it is possible to ...

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