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Meshing tunnel junctions for capacitance extraction
Posted Aug 28, 2012, 5:20 p.m. EDT 0 Replies
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I have developed a model to extract the capacitances of a couple of tunnel junction based on a real geometry. This means a very small junction (1-8nm thick) on a sufficiently large substrate (SiO2 150nm layer on Si) to encompass all fringe fields possible (several microns wide and thick!). I would eventually like to simulate this for 0.5 o 1 nm thick junctions.
I have successfully meshed the structure for down to 3nm thick junctions, but going below, I get the error "empty cavities created". I have tried many different parameters for the mesh (min and max element sizes, element growth rate, mapped and swept meshes where I could, specifying distributions on edges, etc.) I could probably increase the total number of elements, but I will run out of memory (at more than ~1 500 000 elements).
Is there a way anyone can think of to mesh this manually instead of using a free tetrahedral mesh?
Would there be a simpler way to get this information than a full 3D simulation?
Would anyone be able to help me with this?
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Hello Gabriel Droulers
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